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2SK3899 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK3899
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
2SK3899 Datasheet PDF : 10 Pages
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10
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
1000
100
I
AS
= 49.5 A
E
AS
= 245 mJ
10 V
DD
= 30 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
Starting T
ch
= 25°C
1
0.01
0.1
1
10
L - Inductive Load - mH
2SK3899
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
V
DD
= 30 V
R
G
= 25
Ω
80
V
GS
= 20
→
0 V
I
AS
≤
49.5 A
60
40
20
0
25
50
75 100 125 150
Starting T
ch
- Starting Channel Temperature - °C
6
Data Sheet D17174EJ1V0DS
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