PS9851-1 Просмотр технического описания (PDF) - Renesas Electronics
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производитель
PS9851-1
Renesas Electronics
PS9851-1 Datasheet PDF : 15 Pages
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PS9851-1, PS9851-2
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ELECTRICAL CHARACTERISTICS (TA = −40 to +100°C, VDD = 4.5 to 5.5 V, unless
otherwise specified)
Diode
Detector
Coupled
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Terminal Capacitance
High Level Supply
Current
VF
IF = 10 mA, TA = 25°C
IR
VR = 3 V, TA = 25°C
Ct
V = 0 V, f = 1 MHz, TA = 25°C
IDDH
IF = 0 mA (1ch)
Low Level Supply
Current
IDDL
IF = 10 mA (1ch)
High Level Output
Voltage
VOH
IO = −20μA, IF = 0 mA
Low Level Output
Voltage
VOL
IO = 20μA, IF = 10 mA
Threshold Input Voltage
IFHL
VO < 1 V
Isolation Resistance
Isolation Capacitance
RI-O
VI-O = 1 kVDC, RH = 40 to 60%,
TA = 25°C
CI-O
V = 0 V, f = 1 MHz, TA = 25°C
Propagation Delay Time
(H → L)*2
Propagation Delay Time
(L → H)*2
tPHL
IF = 10 mA, VDD = 5 V,
CL = 15 pF, CMOS Levels
tPLH
Pulse Width Distortion
(PWD)*2
⏐tPHL–tPLH⏐
Propagation Delay Skew
tPSK
Rise Time
Fall Time
Common Mode
Transient Immunity at
High Level Output*3
tr
tr
⏐CMH⏐
VDD = 5 V, IF = 0mA,
VCM = 1 kV, VO > 4 V, TA = 25°C
Common Mode
Transient Immunity at
Low Level Output*3
⏐CML⏐
VDD = 5 V, IF = 10 mA,
VCM = 1 kV, VO < 1 V, TA = 25°C
MIN. TYP.∗1
1.6
30
2. 5
2
4.0 5.0
0
2.8
1011
0.6
34
37
3
4
4
10
20
10
20
MAX.
1.9
10
5
5
0.1
6
60
60
30
40
Unit
V
μA
pF
mA/ch
V
mA
Ω
pF
ns
kV/μs
R08DS0107EJ0400 Rev4.00
Apr 09, 2013
Page 5 of 13
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