PEMD3 Просмотр технического описания (PDF) - Philips Electronics
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PEMD3 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
PEMD3
103
handbook, halfpage
hFE
102
10
MGW373
(1)
(2)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10−1
MGW372
(1)
(2)
(3)
1
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
−10−2
−1
−10
IC (mA)
−102
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
(1)
−1
(2)
(3)
MGW375
−102
handbook, halfpage
Vi(on)
(V)
−10
−1
MGW374
(1)
(2)
(3)
−10−1
−10−2
−10−1
−1 IC (mA) −10
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
−10−1
−10−1
−1
−10 IC (mA) −102
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
2001 Nov 07
6
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