2N3055 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2N3055

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2N3055

DESCRIPTION

·With TO-3 package

·Complement to type MJ2955

·DC Current Gain -hFE = 20–70 @ IC = 4 Adc

·Collector–Emitter Saturation Voltage -

VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc

·Excellent Safe Operating Area

APPLICATIONS

·Designed for general–purpose switching

and amplifier applications.

PINNING

PIN

1

2

3

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta= )

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

TC=25

VALUE

100

60

7

15

7

115

150

-65~200

UNIT

V

V

V

A

A

W

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

VALUE

1.52

UNIT

/W

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