FSFR2100 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FSFR2100 Datasheet PDF : 16 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
Parameter
VDS
LVcc
Maximum Drain-to-source Voltage (VDL-VCTR and VCTR-PG)
Low-side Supply Voltage
HVcc to VCTR High-side VCC Pin to Low-side Drain Voltage
HVcc
High-side Floating Supply Voltage
VCON
Control Pin Input Voltage
VCS
Current Sense (CS) Pin Input Voltage
VRT
RT Pin Input Voltage
dVCTR/dt
PD
Allowable Low-side MOSFET Drain Voltage Slew Rate
Total Power Dissipation(4)
TJ
Operating Junction Temperature
TA
Operating Ambient Temperature
TSTG
Storage Temperature Range
MOSFET Section
VDGR
VGS
IDM
Drain Gate Voltage (RGS=1MΩ)
Gate Source (GND) Voltage
Drain Current Pulsed
ID
Continuous Drain Current
Note:
4. Per MOSFET when both MOSFETs are conducting.
TC=25℃
TC=100℃
Min.
600
-0.3
-0.3
-0.3
-0.3
-5.0
-0.3
-40
-55
600
Max.
25.0
25.0
625.0
L-VCC
1.0
5.0
50
12
+150
+85
+150
±30
33
11
7
Unit
V
V
V
V
V
V
V
V/ns
W
°C
°C
°C
V
V
A
A
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
θJC
Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting)
Value
10.44
Unit
ºC/W
© 2007 Fairchild Semiconductor Corporation
FSFR2100 • 1.0.0
4
www.fairchildsemi.com
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