IXZR16N60 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXZR16N60 Datasheet PDF : 4 Pages
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Symbol
Test Conditions
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 IG = 3mA
2040
160
20
33
4
4
4
6
42
13
18
1
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Source-Drain Diode
Symbol
IS
ISM
VSD
Trr
Test Conditions
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle
≤2%
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
200
max.
18
Α
108
A
1.5
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002
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