IXGH56N60A3 Просмотр технического описания (PDF) - IXYS CORPORATION

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IXGH56N60A3

GenX3™ 600V IGBT

IXYS CORPORATION 

Fig. 12. Inductive Switching

Energy Loss vs. Gate Resistance

20

8

18

Eoff

Eon - - - - 7

TJ = 125ºC , VGE = 15V

16

VCE = 480V

6

14

I C = 88A

5

12

4

10

3

I C = 44A

8

2

6

1

4

0

5

10

15

20

25

30

35

40

45

50

RG - Ohms

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temperature

18

6.4

16

Eoff

Eon - - - -

5.6

RG = 5Ω , VGE = 15V

14

VCE = 480V

I C = 88A

4.8

12

4.0

10

3.2

8

2.4

I C = 44A

6

1.6

4

0.8

2

0.0

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

Fig. 16. Inductive Turn-off

Switching Times vs. Collector Current

700

600

tfi

td(off) - - - -

600

RG = 5Ω , VGE = 15V

520

VCE = 480V

500

440

TJ = 125ºC

400

360

300

TJ = 25ºC

280

200

200

20

30

40

50

60

70

80

90

IC - Amperes

© 2009 IXYS CORPORATION, All Rights Reserved

IXGH56N60A3

Fig. 13. Inductive Switching

Energy Loss vs. Collector Current

18

16

Eoff

Eon - - - -

14

RG = 5Ω , VGE = 15V

VCE = 480V

12

10

TJ = 125ºC

8

6

4

2

TJ = 25ºC

0

20

30

40

50

60

70

80

IC - Amperes

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

90

Fig. 15. Inductive Turn-off

Switching Times vs. Gate Resistance

540

520

tfi

td(off) - - - -

TJ = 125ºC, VGE = 15V

500

VCE = 480V

480

460

I C = 88A

440

I C = 44A

420

400

380

5

10

15

20

25

30

35

40

45

RG - Ohms

1100

1000

900

800

700

600

500

400

300

50

Fig. 17. Inductive Turn-off

Switching Times vs. Junction Temperature

600

550

550

tfi

td(off) - - - -

500

RG = 5Ω , VGE = 15V

500

VCE = 480V

450

450

IC = 44A

400

350

400

350

IC = 88A

300

300

250

250

200

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

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