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IXGH56N60A3 Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXGH56N60A3
GenX3™ 600V IGBT
IXYS CORPORATION
IXGH56N60A3 Datasheet PDF : 6 Pages
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IXGH56N60A3
Fig. 7. Transconductance
70
60
T
J
= - 40ºC
25ºC
50
125ºC
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90 100
I
C
- Amperes
16
14
V
CE
= 300V
I
C
= 44A
12
I
G
= 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0
20
40
60
80
100
120
140
Q
G
- NanoCoulombs
10,000
Fig. 9. Capacitance
1,000
Cies
Coes
100
Cres
f
= 1 MHz
10
0
5
10
15
20
25
30
35
40
V
CE
- Volts
Fig. 10. Reverse-Bias Safe Operating Area
160
140
120
100
80
60
40
T
J
= 125ºC
20
R
G
= 5
Ω
dv / dt < 10V / ns
0
100
200
300
400
500
600
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
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IXYS REF: G_56N60A3(65)8-04-09-C
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