DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

110N06NS Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
110N06NS
Infineon
Infineon Technologies Infineon
110N06NS Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS10 V
BSC110N06NS3 G
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
Rev.2.3
limited by on-state
resistance
102
101
100
10-1
10-1
100
101
V DS [V]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-10-29

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]