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Номер в каталоге
Компоненты Описание
110N06NS Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
110N06NS
OptiMOS™3 Power-Transistor
Infineon Technologies
110N06NS Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
1 Power dissipation
P
tot
=f(
T
C
)
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
BSC110N06NS3 G
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
Rev.2.3
limited by on-state
resistance
10
2
10
1
10
0
10
-1
10
-1
10
0
10
1
V
DS
[V]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
0.5
10
0
0.2
0.1
0.05
10
-1
0.02
0.01
single pulse
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2009-10-29
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