2N3724 Просмотр технического описания (PDF) - Continental Device India Limited

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2N3724

NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS

Continental Device India Limited 

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS

2N3724

2N3725

TO-39

Metal Can Package

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current - Continuous

Power Dissipation @ TA=25º C

Derate Above 25º C

Power Dissipation@ TC=25º C

Derate Above 25º C

Operating And Storage Junction

Temperature Range

SYMBOL

VCEO

VCBO

VEBO

IC

PD

PD

Tj, Tstg

2N3724

2N3725

30

50

50

80

6.0

1.0

1.0

5.71

5.0

28.6

- 65 to +200

UNITS

V

V

V

A

W

mW/ º C

W

mW/ º C

ºC

ELECTRICAL CHARACTERISTICS (TA=25º C unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut Off Current

SYMBOL TEST CONDITION

VCEO* IC=10mA, IB=0

VCES IC=10µA, VBE=0

VCBO IC=10µA, IE=0

VEBO IE=10µA, IC=0

ICBO VCB=40V, IE=0

VCB=60V, IE=0

2N3724

>30

>50

>50

>6.0

<1.7

-

2N3725

>50

>80

>80

>6.0

-

<1.7

UNITS

V

V

V

V

µA

µA

Collector Cut Off Current

Base Current

TA=100º C

VCB=40V, IE=0

VCB=60V, IE=0

ICES VCE=50V, VEB=0

VCE=80V, VEB=0

IB VCE=50V, VEB=0

VCE=80V, VEB=0

<120

-

µA

-

<120

µA

<10

-

µA

-

<10

µA

<10

-

µA

-

<10

µA

Continental Device India Limited

Data Sheet

Page 1 of 4

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