CY2 Просмотр технического описания (PDF) - TriQuint Semiconductor

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CY2

High-Power Packaged GaAs FET

TriQuint Semiconductor 

CLY2

Datasheet

High-Power Packaged GaAs FET

Description

The CLY2 is a high-breakdown voltage GaAs

FET designed for PA driver applications in the

400 MHz to 3 GHz frequency range. It is ideal

for portable PA applications in mobile phones

and portable WLAN transceivers due to its

easy matching and excellent linearity. The

CLY2 exhibits +23.5 dBm output power with

+3V Vds at 1.8 GHz with an associated gain

of 14.5 dB. Power added efficiencies to 55%

are achievable.

Features

• For frequencies up to 3 GHz

• Wide operating voltage range: 2 to 6 V

• POUT 23.5 dBm typical at VD=3V,

f=1.8GHz

• High efficiency: better than 55 %

• Nfmin 0.79 dB typical at 900 MHz

• Low Cost

Applications

• Power Amplifiers for

WLAN transceivers

• Driver Amplifiers for

WLAN or mobile

phone basestations

• Low Noise Amplifier

for basestations and

antenna amplifiers

Package Outline,

MW6

4

5

6

3

2

1

Pin Configuration:

1 & 6: Gate

2 & 5: Source

3 & 4: Drain

For additional information and latest specifications, see our website: www.triquint.com

2

Revision C, December 14, 2005

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