RK9410 Просмотр технического описания (PDF) - ROHM Semiconductor
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RK9410 Datasheet PDF : 4 Pages
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Transistors
zElectrical characteristic curves
10
Ta=125˚C
75˚C
25˚C
1
−25˚C
VDS=0V
Pulsed
0.1
100
10
Ta=−25˚C
25˚C
75˚C
125˚C
1
0.1
VDS=10V
Pulsed
0.01
0.0
0.5
1.0
1.5
SOURCE - DRAIN VOLTAGE : VGS (V)
Fig.1 Reverse Drein Current
vs. Source - Drain Voltage
0.01
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.2 Forward Transfer Admittance
vs. Drain Current
RK9410
1
0.1 Ta=125˚C
75˚C
25˚C
−25˚C
0.01
VGS=10V
Pulsed
0.001
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
1
Ta=125˚C
75˚C
0.1
25˚C
−25˚C
0.01
VGS=4V
Pulsed
0.001
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
0.050
0.045
0.040
VGS=10V
ID=7A
Pulsed
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (˚C)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
0.100
0.080
Ta=25˚C
Pulsed
0.060
0.040
ID = 7A
3.5A
0.020
0.000
0
2 4 6 8 10 12 14 16 18 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
4.000
3.000
2.000
1.000
VDS=10V
ID=1mA
Pulsed
10000
1000
100
Ta=25˚C
f=1MHz
VGS=0V
Pulsed
Ciss
Coss
Crss
0.000
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (˚C)
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
10
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
30
15
25
20
VDS
15
VGS
10
10
5
Ta=25˚C
5
VDD=24V
ID=7A
0
Pulsed 0
0
8
16
24
32
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
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