RK9410 Просмотр технического описания (PDF) - ROHM Semiconductor
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RK9410 Datasheet PDF : 4 Pages
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Transistors
zThermal resistance (Ta=25°C)
Parameter
Channel to Ambient
Symbol
Rth(ch-A)
Limits
62.5
Unit
˚C / W
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-Source Leakage
IGSS
−
Drain-Source Breakdown Voltage V (BR) DSS 30
Zero Gate Voltage Drain Current IDSS
−
Gate Threshold Voltage
VGS (th)
1.0
−
Static Drain-Source On-State
Resistance
RDS (on)
−
−
Forward Transfer Admittance
l Yfs l∗
5
Input Capacitance
Ciss
−
Output Capacitance
Coss
−
Reverse Transfer Capacitance Crss
−
Turn-On Delay Time
td (on)∗
−
Rise Time
tr∗
−
Turn-Off Delay Time
td (off)∗
−
Fall Time
tf∗
−
Total Gate Charge
Qg∗
−
Gate-Source Charge
Qgs∗
−
Gate-Drain Charge
∗ Pulsed
Qgd∗
−
Typ.
−
−
−
−
18
28
33
−
710
400
200
12
43
48
30
20.5
3.3
5.2
Max.
±10
−
1
2.5
23
37
43
−
−
−
−
−
−
−
−
41
−
−
Unit
Test Conditions
µA VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=7A, VGS=10V
mΩ ID=7A, VGS=4.5V
ID=7A, VGS=4V
S ID=7A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=3.5A, VDD 15V
ns VGS=10V
ns RL=4.3Ω
ns RGS=10Ω
nC VDD=15V
nC VGS=10V
nC ID=7A
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
∗ Pulsed
Symbol
VSD∗
trr∗
Qrr∗
Min.
−
−
−
Typ.
−
155
145
Max.
1.5
−
−
Unit
Test Conditions
V Is=5.2A, VGS=0V
ns IDR=5.2A, VGS=0V
nC di/dt=100A/µs
RK9410
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