HIH30N120TF Просмотр технического описания (PDF) - Semihow

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HIH30N120TF

1200V Field Stop Trench IGBT

Semihow 

HIH30N120TF

1200V Field Stop Trench IGBT

FEATURES

‰ 1200V Field Stop Trench Technology

‰ High Speed Switching

‰ Low Conduction Loss

‰ Positive Temperature Coefficient

‰ Easy Parallel Operation

Dec 2013

VCES = 1200 V

IC = 30 A

VCE(sat) typ = 2.0 V

TO-3P

G

C

E

Absolute Maximum Ratings

Symbol

VCES

IC

ICM

IF

IFM

VGES

PD

TJ

TSTG

TL

Parameter

Collector-Emitter Voltage

Collector Current

Collector Current

Collector Current

– Continuous (TC = 25୅)

– Continuous (TC = 100୅)

– Pulsed

(Note 1)

Diode Forward Current – Continuous (TC = 25୅)

Diode Forward Current – Continuous (TC = 100୅)

Diode Current

– Pulsed

(Note 1)

Gate-Emitter Voltage

Power Dissipation

– Continuous (TC = 25୅)

Power Dissipation

– Continuous (TC = 100୅)

Operating Temperature Range

Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Notes.

1. Pulse width limited by max junction temperature

Thermal Resistance Characteristics

Symbol

RșJC(IGBT)

RșJC(Diode)

RșJA

Parameter

Junction-to-Case

Junction-to-Case

Junction-to-Ambient

Value

1200

60

30

90

60

30

90

ρ20

329

132

-55 to +150

-55 to +150

300

Typ.

--

--

--

Max.

0.38

2.1

40

Units

V

A

A

A

A

A

A

V

W

୅

୅

୅

Units

୅/W

క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡

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