FGH30N120FTDTU Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

FGH30N120FTDTU

1200V, 30A Trench IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 30A

TC = 25oC

TC = 125oC

trr

Irr

Diode Reverse Recovery Time

IF =30A,

Diode Peak Reverse Recovery Current di/dt = 200A/µs

TC = 25oC

TC = 125oC

TC = 25oC

TC = 125oC

Qrr

Diode Reverse Recovery Charge

TC = 25oC

TC = 125oC

Min.

-

-

-

-

-

-

-

-

Typ.

1.3

1.3

730

775

43

47

5.9

18.2

Max

1.7

-

-

-

-

-

-

-

Units

V

ns

A

µC

FGH30N120FTD Rev. A

3

www.fairchildsemi.com

Share Link: