FGH30N120FTDTU Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

FGH30N120FTDTU

1200V, 30A Trench IGBT

Fairchild Semiconductor 

FGH30N120FTD

1200V, 30A Trench IGBT

Features

• Field stop trench technology

• High speed switching

• Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A

• High input impedance

• RoHS compliant

Applications

• Induction heating and Microwave oven

• Soft switching applications

E

C

G

November 2008

tm

General Description

Using advanced field stop trench technology, Fairchild’s 1200V

trench IGBTs offer superior conduction and switching perfor-

mances, and easy parallel operation with exceptional avalanche

ruggedness. This device is designed for soft switching applica-

tions.

C

COLLECTOR

(FLANGE)

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

IF

PD

TJ

Tstg

TL

Description

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

Diode Continuous Forward Current

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC(IGBT)

RθJC(Diode)

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

G

E

Ratings

1200

± 25

60

30

90

30

339

132

-55 to +150

-55 to +150

300

Typ.

-

-

-

Max.

0.38

1.2

40

Units

V

V

A

A

A

A

W

W

oC

oC

oC

Units

oC/W

oC/W

oC/W

©2008 Fairchild Semiconductor Corporation

1

FGH30N120FTD Rev. A

www.fairchildsemi.com

Share Link: