2SK3349 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SK3349 Datasheet PDF : 8 Pages
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2SK3349
Drain to Source Satueation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
10m A
0.2
25m A
I D = 50mA
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
2.5 V
10
5
2
1.0
0.5
0.01
VGS = 4V
0.02
0.05
0.1
Drain Current I D (A)
Static Drain to Source on State
Resistance vs. Temperature
10
8
I D = 25m A
6
VGS = 2.5 V
4
10mA
2
4V
10,25,50m A
0
Pulse Test
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance
vs. Drain Current
0.5
V DS = 10 V
Pulse Teat
Tc = –25 °C
0.2
0.1
25 °C
0.05
75 °C
0.02
0.01
0.005
0.001
0.002
0.005
0.1
Drain Current I D (A)
4
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