2SK3349 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK3349

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3349

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

VDSS

20

Gate to source voltage

VGSS

±10

Drain current

ID

50

Drain peak current

I Note1

D(pulse)

200

Body-drain diode reverse drain current IDR

50

Channel dissipation

Pch Note 2

100

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7 mm)

Unit

V

V

mA

mA

mA

mW

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Conditions

Drain to source breakdown V(BR)DSS

20

—

—

V

voltage

ID = 100 µA, VGS = 0

Gate to source breakdown V(BR)GSS

±10

—

—

V

voltage

IG = ±100 µA, VDS = 0

Gate to source leak current IGSS

Zero gate voltege drain

I DSS

current

—

—

±5

µA

VGS = ±8 V, VDS = 0

—

—

1

µA

VDS = 20 V, VGS = 0

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

RDS(on)

Forward transfer admittance |yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

0.8

—

1.8

V

ID = 10 µA, VDS = 5 V

—

2.8

3.6

Ω

ID = 25 mA,VGS = 4 V Note 3

—

4.8

7.2

Ω

ID = 10 mA,VGS = 2.5 V Note 3

56

85

—

mS

ID = 25 mA, VDS = 10 V Note 3

—

6

—

pF

VDS = 10 V

—

7

—

pF

VGS = 0

—

1.2

—

pF

f = 1 MHz

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Note: 3. Pulse test

4. Marking is DN

—

120

—

ns

ID = 25 mA, VGS = 4 V

—

450

—

ns

RL = 400 Ω

—

480

—

ns

—

500

—

ns

2

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