2SK3349 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SK3349 Datasheet PDF : 8 Pages
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2SK3349
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)
RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)
• 2.5 V gate drive device
• Small package (SMPAK)
Outline
SMPAK
D
3
1
2
ADE-208-804 (Z)
1st.Edition.
June 1999
G
S
1. Source
2. Gate
3. Drain
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