IXKK85N60C Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXKK85N60C Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 13V, VDS = 380V, ID = 85A
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 350V, ID = 85A
RthJC
RthCH
Characteristic Values
Min. Typ. Max.
13.6
nF
4400
pF
290
pF
20
ns
27
ns
110
ns
10
ns
500 640 nC
50
nC
240
nC
0.18 °C/W
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 85A, -di/dt = 200A/μs
VR = 350V, VGS = 0V
Characteristic Values
Min. Typ. Max.
85 A
250 A
1.2 V
580
ns
46
μC
140
A
IXKK85N60C
TO-264 (IXKK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Terminals:
1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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