SPA15N60CFD Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SPA15N60CFD

CoolMOS™ Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Reverse Diode

Diode continuous forward current2)

Diode pulse current3)

IS

I S,pulse

T C=25 °C

Diode forward voltage

V SD

V GS=0 V, I F=I S,

T j=25 °C

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

t rr

Q rr

V R=480 V, I F=I S,

di F/dt =100 A/µs

I rrm

Peak rate of fall of reverse recovery

current

di rr / dt

T j=25 °C

SPA15N60CFD

min.

Values

typ.

Unit

max.

-

-

13.4 A

-

-

33

-

1.0

1.2 V

-

147

- ns

-

1

- µC

-

12

-A

-

1200

- A/µs

Rev. 1.0

page 4

2007-01-10

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