SPA15N60CFD Просмотр технического описания (PDF) - Infineon Technologies
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SPA15N60CFD Datasheet PDF : 12 Pages
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CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
SPA15N60CFD
Product Summary
V DS @ Tjmax
R DS(on),max
ID
650 V
0.330 Ω
13.4 A
PG-TO220FP
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Type
SPA15N60CFD
Package
PG-TO220FP
Marking
15N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
T C=25 °C
Pulsed drain current3)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
I D=6.7 A, V DD=50 V
Avalanche energy, repetitive3),4)
E AR
I D=13.4 A, V DD=50 V
Avalanche current, repetitive3),4)
Drain source voltage slope
I AR
dv /dt
I D=13.4 A,
V DS=480 V, T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I S=13.4 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
V GS
static
AC (f >1 Hz)
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Value
13.4
8.4
33
460
0.8
13.4
80
40
600
±20
±30
34
-55 ... 150
50
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.0
page 1
2007-01-10
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