SFF10N60 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
SFF10N60 Datasheet PDF : 7 Pages
| |||
Electrical Characteristics(Tc=25℃)
SFF10N60
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward Trans conductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge(gate-source
plus gate-drain
Gate-source charge
Gate-drain("miller")Charge
Symbol Test Condition Min Type
IGSS
VGS=±30V,VDS=0V
-
-
V(BR)GSS IG=±10µA,VDS=0V
±30
-
IDSS
VDS=600V,VGS=0V
-
-
V(BR)DSS ID=250µA,VGS=0V
500
-
VGS(th)
VDS=10V,ID=250µA
3
-
RDS(ON)
VGS=10V,ID=4.75A
-
0.66
gfs
VDS=50V,ID=4.75A
-
8.2
Ciss
VDS=25V,
-
1610
Crss
VGS=0V,
-
156
Coss
f=1MHz
-
20
tr
VDD=300V,
-
68
ton
ID=10A,
-
109
tf
RG=25Ω
-
214
toff
(Note4,5)
-
85
VDD=480V,
Qg
VGS=10V,
-
34
Qgs
ID=10A
-
6.9
Qgd
(Note4,5)
-
12
Max
±100
-
1
-
3.5
0.75
-
2065
210
26
91
150
300
165
45
-
-
Unit
nA
V
µA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol Test condition
IDR
-
IDRP
-
VDSF
IDR=10A,VGS=0V
trr
IDR=10A,VGS=0V,
Qrr
dIDR /dt=100 A / µs
Min Type Max Unit
-
-
10
A
-
-
38
A
-
1.05 1.4
V
-
442 633 ns
-
2.16 3.24 µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=14.5mH, IAS=10A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. ISD≤10A, di/dt≤300A/us, VDD<BVDSS, STARTING TJ=25℃
4. Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
Share Link: 