WFF2N60 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF2N60 Datasheet PDF : 7 Pages
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WFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. This devices is
specially well suited for high efficiency switch mode power
supply.
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
2.0*
1.5*
9.5*
±30
140
2.8
4.5
23
0.18
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Value
Min Typ Max
-
-
5.5
-
-
62.5
Units
℃/W
℃/W
Re v. B1 N ov. 2007
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T03-2
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