SVF2N60F Просмотр технического описания (PDF) - Silan Microelectronics
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SVF2N60F Datasheet PDF : 10 Pages
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SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF2N60M/D
34
0.27
Rating
SVF2N60T
600
±30
2.0
8
44
0.35
115
-55～+150
-55～+150
SVF2N60F
23
0.18
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
SVF2N60M/D
RθJC
3.7
RθJA
110
Rating
SVF2N60T
2.86
62.5
SVF2N60F
5.56
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=1.0A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=2.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=2.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
Typ.
--
--
--
--
3.7
250.1
35.7
1.1
Max.
--
1.0
±100
4.0
4.2
--
--
--
Unit
V
µA
nA
V
Ω
pF
--
9.2
--
-- 23.4 --
ns
-- 15.3 --
-- 20.1 --
-- 5.67 --
-- 1.74 --
nC
-- 1.99 --
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 2 of 10
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