SVF12N60K Просмотр технического описания (PDF) - Silan Microelectronics

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Компоненты Описание

производитель

SVF12N60K

12A, 600V N-CHANNEL MOSFET

Silan Microelectronics 

Silan

Microelectronics

SVF12N60T/F/FG/S/K_Datasheet

TYPICAL CHARACTERISTICS(continued)

3000

2500

Figure 5. Capacitance Characteristics

Ciss=Cgs+Cgd(Cds=shorted)

Coss=Cds+Cgd

Crss=Cgd

2000

1500

1000

500

Ciss

Coss

Crss

Notes:

1. VGS=0V

2. f=1MHz

0

0.1

1

10

100

Drain-Source Voltage – VDS(V)

Figure 6. Gate Charge Characteristics

12

VDS=480V

10

VDS=300V

VDS=120V

8

6

4

2

Note: ID=12A

0

0

5

10

15

20

25

Total Gate Charge – Qg(nC)

Figure 7. Breakdown Voltage Variation

vs. Temperature

1.2

1.1

1.0

0.9

0.8

-100 -50 0

Notes:

1. VGS=0V

2. ID=250µA

50 100 150 200

Junction Temperature – TJ(°C)

Figure 9-1. Max. Safe Operating

Area(SVF12N60T)

102

100µs

101

1ms

10ms

DC

100

Operation in This Area is

Limited by RDS(ON)

10-1

Notes:

1.TC=25°C

2.Tj=150°C

3.Single Pulse

10-2

100

101

102

103

Drain Source Voltage - VDS(V)

Figure 8. On-resistance Variation

3.0

vs. Temperature

2.5

2.0

1.5

1.0

0.5

0.0

-100 -50 0

Notes:

1. VGS=10V

2. ID=6A

50 100 150 200

Junction Temperature – TJ(°C)

Figure 9-2. Max. Safe Operating

Area(SVF12N60F(G))

102

100µs

101

1ms

10ms

100

Operation in This Area is DC

Limited by RDS(ON)

10-1

Notes:

1.TC=25°C

2.Tj=150°C

3.Single Pulse

10-2

100

101

102

103

Drain Source Voltage - VDS(V)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.5

2012.08.23

Page 4 of 9

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