SVF12N60K Просмотр технического описания (PDF) - Silan Microelectronics
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SVF12N60K Datasheet PDF : 9 Pages
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Silan
Microelectronics
SVF12N60T/F/FG/S/K_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF12N
60T
225
1.8
Ratings
SVF12N SVF12N
60F(G)
60S
600
±30
12
9
48
51
180
0.41
1.44
795
-55～+150
-55～+150
SVF12N
60K
213
1.7
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVF12N
60T
0.56
62.5
Ratings
SVF12N SVF12N
60F(G)
60S
2.44
0.69
120
62.5
SVF12N
60K
0.59
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=6.0A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=12A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=12A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
0.58 0.75
1469.9 --
161.2 --
5.0
--
37.0
--
71.67 --
80.0
--
43.67 --
24.35 --
7.79
--
7.34
--
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.5
2012.08.23
Page 2 of 9
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