IRFP064PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFP064PBF

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFP064, SiHFP064

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91201

S11-0447-Rev. C, 14-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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