BD705 Просмотр технического описания (PDF) - New Jersey Semiconductor
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Компоненты Описание
производитель
BD705
New Jersey Semiconductor
BD705 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tca3a - 25 <C unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cutoff Current
(lE-0)
'
Test Conditions
Min. Typ. Max. Unit
forBD705/706
forBD707/708
for B D709/71 0
forBD711/712
VCB<=45V
VCB-60V
VOB «= 80 V
VCB-100V
100
uA
100
UA
100
(jA
100
HA
ICEO Collector Cutoff Current
(Is =0)
forBD705/706
forBD707/708
forBD709;710
forBD711/712
forBD705/706
forBD707/708
forBD709/710
forBD711/712
VCB=45V
VCB=-60V
VCB=80V
VcB=-100V
V0e=22V
VCE-30V
VCE=40V
VCE -50V
1
mA
1
mA
1
mA
1 mA
1 mA
1 mA
1
mA
1 mA
IEBO Emitter Cutoff Current
(Ic - 0) .
VEB =5 V
1
mA
VoEO(sus)* Collector-emitter Sustaining Ic = 100 mA for BD705/706 45
V
Voltage (IB =0)
for BD707/708 60
V
forBD709/710 80
V
forBD711/712 100
V
VcE(Bal)* Collector-emitter Saturation
Voltage
IC=4A
IB -0.4 A
1
V
VCGK* Knee Voltage
VBE* Base-emitter.Voltage
IC=3A
|c = 4 A
IB-**
VCE = 4 V
0.4
V
1.5
V
hpE* DC Current Gain
IC=0.5A
IC»2A
Ic - 4 A
lo = 10 A
VCE=2V
40
VCE=2V
for BD70S/706 30
for BD707/708 30
forBD709/710 30
VCE - 4 V
forBD705/706 20
forBD707/708 15
forBD709/710 15
forBD711/712 15
VCE=4 V
for BD705/706 5
for BD707/708 5
forBD709/710
forBD711/712
120 400
30
150
150
150
150
10
10
8
8
fT
Transition Frequency
Ic = 300 mA VCE = 3 V
3
MHz
' Pulsed : pulse duration =< 300 MS, duty cycle = 1,5 %.
" Value for which lo = 3,3A at'Vce = 2V.
For PNP types voltage and current values are negative.
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