MDD1904RH Просмотр технического описания (PDF) - MagnaChip Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MDD1904RH Datasheet PDF : 6 Pages
| |||
25
20
VGS = 10V
8.0V
5.0V
15
4.5V
10
4.0V
5
3.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.4
2.2
※ Notes :
1. VGS = 10 V
2.0
2. ID = 8.0 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
220
210
200
190
180
170
160
150
140
130
120
110
100
90
80
0
VGS = 6.0V
VGS = 10V
5
10
15
20
25
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
300
※ Notes :
ID = 8.0A
250
200
150
100
TJ = 25℃
50
0
2
3
4
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
※ Notes :
VDS = 10V
15
10
TJ=25℃
5
0
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
VGS = 0V
101
100
TJ=25℃
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Apr. 2012. Version 1.0
3
MagnaChip Semiconductor Ltd.
Share Link: 