MRF9030NBR1 Просмотр технического описания (PDF) - Freescale Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MRF9030NBR1

945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

22

60

20

Gps

40

18

η

16

14

20

VDD = 26 Vdc

IDQ = 250 mA

0

f1 = 945 MHz

f2 = 945.1 MHz

−20

12

IMD

−40

10

0.1

1

10

Pout, OUTPUT POWER (WATTS) PEP

Figure 9. Power Gain, Efficiency and IMD

versus Output Power

−60

100

1010

109

108

107

90 100 110 120 130 140 150 160 170 180 190 200 210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

Figure 10. MTTF Factor versus Junction Temperature

MRF9030NR1 MRF9030NBR1

6

RF Device Data

Freescale Semiconductor

Share Link: