PSD112/14 Просмотр технического описания (PDF) - Powersem GmbH
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PSD112/14 Datasheet PDF : 2 Pages
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PSD 112
300
[A]
250
200
150
100
TVJ = 150°C
50
IF
0
0.5
TVJ = 25°C
1.0 1.5 2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
900
780
4
10
2
As
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
TVJ=45°C
TVJ=150°C
3
10
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode
400
[W] PSD 112
350
300
85
TC
90
0.15 0.09 = RTHCA [K/W]
95
0.22
100
105
250
200
150
100
50
PVTOT
0
50
IFAVM
0.34
0.59
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.34
100 0
50
[A] Tamb
100
110
115
120
125
130
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
130
[A]
110
90
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
IdAV
0
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Zth
ZthJK
ZthJC
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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