2SB1560 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SB1560 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBEsat Base-emitter saturation voltage
IC=-7A ;IB=-7mA
ICBO
Collector cut-off current
VCB=-160V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-7A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=-2A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-7A;RL=10Ω
IB1=- IB2=-7mA
VCC=-70V
hFE Classifications
O
P
5000-12000 6500-20000
Y
15000-30000
Product Specification
2SB1560
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 μA
-100 μA
5000
230
pF
50
MHz
0.8
μs
3.0
μs
1.2
μs
2
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