C4505 Просмотр технического описания (PDF) - ROHM Semiconductor
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Компоненты Описание
производитель
C4505 Datasheet PDF : 4 Pages
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Transistors
2SC4505
zElectrical characteristics (Ta=25°C)
200
Ta=25°C
1
0.5
160
3.5mA
3.0mA
2.5mA
2.0mA
0.2
1.5mA
0.1
120
1.0mA
0.05
VCE=3V
0.5mA
80
40
0
IB=0mA
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.02
0.01
0.005
0.002
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characterisitics
1000
500
Ta=25°C
200
100
VCE=10V
50
5V
20
10
5
2
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( Ι )
1000
500
200
100
50
Ta=100°C
−25°C
VCE=10V
25°C
20
10
5
2
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
10
Ta=25°C
5
2
1
0.5
0.2
0.1
IC/IB=20
10
0.05
5
0.02
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
10
IC/IB=10
5
2
1 Ta=−25°C
VBE(sat)
0.5
25°C 100°C
0.2
0.1
Ta=100°C
0.05
VCE(sat)
25°C −25°C
0.02
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6 Collector-emitter saturation voltage
Collector-base saturation voltage vs. collector current
1000
500
Ta=25°C
VCE=10V
200
100
50
20
10
5
2
1
−0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product vs. emitter current
1000
500
200
100
Ta=25°C
f=1MHz
IE=0A
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
1
Ic Max. (Pulse∗)
Pw=10m
Pw=1m
0.1
Pw=100m
DC
0.01
Ta=25°C
∗Single
0.001 nonrepetitive pulse
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.D
2/3
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