CMT02N60 Просмотр технического описания (PDF) - Champion Microelectronic
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CMT02N60 Datasheet PDF : 7 Pages
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CMT02N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
CMT02N60GN251*
TO-251
CMT02N60GN252*
TO-252
CMT02N60GN220*
TO-220
CMT02N60GN220FP*
TO-220 Full Package
CMT02N60XN251*
TO-251
CMT02N60XN252*
TO-252
CMT02N60XN220*
TO-220
CMT02N60XN220FP*
TO-220 Full Package
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen Free and PB Free Product
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25℃.)
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 2.0 A)
Forward Transconductance (VDS ≧ 50 V, ID = 1.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
VSD
ton
trr
CMT02N60
Min
Typ
Max
600
1
3
100
100
2.0
3.1
4.0
3.3
4.4
8.8
1.0
435
56
9.2
12
21
30
24
13
2.0
6.0
4.5
7.5
1.0
1.6
75
340
Units
V
uA
nA
nA
V
Ω
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
V
ns
ns
2010/12/21 Rev. 1.5
Champion Microelectronic Corporation
Page 2
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