2SC5339 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SC5339 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5339
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=400mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.25A
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
VF
Diode forward voltage
fT
Transition frequency
Switching times
IF=5A
IE=0.1A ; VCE=10V
ts
Storage time
tf
Fall time
ICP=5A;IB1(end) =1.1A
fH=31.5kHz
MIN TYP. MAX UNIT
5
V
5
V
1.3
V
1
mA
71
250 mA
10
30
4
8
82
pF
1.35 1.8
V
2.4
MHz
4
6
µs
0.2
0.5
µs
2
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