H7N1004FN Просмотр технического описания (PDF) - Renesas Electronics
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H7N1004FN Datasheet PDF : 8 Pages
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H7N1004FN
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
Pulse Test
4V
30
3.5 V
20
10
VGS = 3 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
ID = 20 A
0.4
10 A
0.2
5A
0
5
10
15
20
Gate to Source Voltage VGS (V)
REJ03G5193-0100 Rev.1.00 Oct 23, 2007
Page 3 of 7
Maximum Safe Operation Area
100
30
10
3
1
(TcDP=CW2O=5p°1eC0r)amt1siom(n1ssho1t0) 0
10
µs
µs
0.3
0.1
Operation in
this area is
0.03 limited by RDS(on)
Ta = 25°C
0.01
0.1 0.3 1 3
10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
-25°C
10
25°C
Tc = 75°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
VGS = 4.5 V
20
10 V
10
5
12
5 10 20 50 100
Drain Current ID (A)
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