AP3310GH Просмотр технического описания (PDF) - Advanced Power Electronics Corp

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AP3310GH

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP3310GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance2

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current (Tj=25oC)

Drain-Source Leakage Current (Tj=150oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS=0V, ID=-250uA

VGS=-4.5V, ID=-2.8A

VGS=-2.5V, ID=-2.0A

VDS=VGS, ID=-250uA

VDS=-5V, ID=-2.8A

VDS=-20V, VGS=0V

VDS=-16V, VGS=0V

VGS=±12V

ID=-2.8A

VDS=-6V

VGS=-5V

VDS=-6V

ID=-1A

RG=6Ω,VGS=-5V

RD=6Ω

VGS=0V

VDS=-6V

f=1.0MHz

-20 - - V

- - 150 mΩ

- - 250 mΩ

-0.5 - - V

- 2.8 - S

- - -1 uA

- - -25 uA

- - ±100 nA

- 4.2 - nC

- 1.2 - nC

- 0.4 - nC

- 7 - ns

- 8 - ns

- 13 - ns

- 5 - ns

- 320 - pF

- 75 - pF

- 55 - pF

Source-Drain Diode

Symbol

VSD

trr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Qrr

Reverse Recovery Charge

Test Conditions

Tj=25℃, IS=-10A, VGS=0V

IS=-2.8A, VGS=0V,

dI/dt=100A/µs

Min. Typ. Max. Units

- - -1.2 V

- 17 - ns

- 9 - nC

Notes:

1.Pulse width limited by Maximum junction temperature.

2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

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