AM29LV800BB-90DTC2 Просмотр технического описания (PDF) - Advanced Micro Devices

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AM29LV800BB-90DTC2

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

Advanced Micro Devices 

SUPPLEMENT

Am29LV800B Known Good Die

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

DISTINCTIVE CHARACTERISTICS

s Single power supply operation

— 2.7 to 3.6 V for read, program, and erase

operations

— Ideal for battery-powered applications

s Manufactured on 0.32 µm process technology

s High performance

— 80, 90, or 120 ns access time

s Low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

s Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

s Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

s Top or bottom boot block configurations

available

s Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

s Minimum 1,000,000 write cycle guarantee

per sector

s Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

s Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

s Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

s Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

s Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

s 20-year data retention at 125°C

s Tested to datasheet specifications at

temperature

s Quality and reliability levels equivalent to

standard packaged components

Publication# 21356 Rev: E Amendment/0

Issue Date: March 12, 2002

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