MDF9N50TH Просмотр технического описания (PDF) - MagnaChip Semiconductor

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Компоненты Описание

производитель

MDF9N50TH

N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MagnaChip Semiconductor 

Vgs=5.5V

=6.0V

10

=6.5V

=7.0V

=8.0V

=10.0V

1

Notes

1. 250㎲ Pulse Test

2. TC=25℃

0.1

0.1

1

10

VDS,Drain-Source Voltage [V]

Fig.1 On-Region Characteristics

1.8

※ Notes :

1.6

1. VGS = 10 V

2. ID = 5 A

1.4

1.2

1.0

VGS=10V

VGS=4.5V

0.8

0.6

-50

-25

0

25

50

75

100

125

150

TJ, Junction Temperature [oC]

Fig.3 On-Resistance Variation with

Temperature

1.3

1.2

1.1

1.0

0.9

VGS=10.0V

VGS=20V

0.8

0.7

0.6

0

5

10

15

20

ID,Drain Current [A]

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.2

※ Notes :

1. VGS = 0 V

2. ID = 250㎂

1.1

1.0

0.9

0.8

-50

0

50

100

150

200

TJ, Junction Temperature [oC]

Fig.4 Breakdown Voltage Variation vs.

Temperature

* Notes ;

1. VDS=30V

10

150℃

25℃

-55℃

1

4

5

6

7

8

VGS [V]

Fig.5 Transfer Characteristics

100

※ Notes :

1. V = 0 V

GS

2. ID = 250㎂

10

150℃

25℃

1

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V , Source-Drain Voltage [V]

SD

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

Dec.2009. Version 1.2

3

MagnaChip Semiconductor Ltd.

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