MDF9N50TH Просмотр технического описания (PDF) - MagnaChip Semiconductor
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MDF9N50TH Datasheet PDF : 6 Pages
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Ordering Information
Part Number
MDF9N50TH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 4.5A
VDS = 30V, ID = 4.5A
VDS = 400V, ID = 9.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 9.0A,
RG = 25Ω(3)
IS = 9.0A, VGS = 0V
IF = 9.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=5.1mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
500
-
3.0
-
-
V
5.0
-
-
1
µA
-
-
100
nA
0.72
0.85
Ω
-
7
-
S
-
19
-
-
5.7
-
nC
-
7.6
-
-
780
-
4.0
pF
-
100
-
18
-
34
ns
-
38
-
27
-
9.0
-
A
-
1.4
V
-
272
ns
-
2.0
µC
Dec.2009. Version 1.2
2
MagnaChip Semiconductor Ltd.
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