GW39NC60VD Просмотр технического описания (PDF) - STMicroelectronics

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производитель

GW39NC60VD

40 A - 600 V - very fast IGBT

STMicroelectronics 

Electrical characteristics

STGW39NC60VD

Table 8. Collector-emitter diode

Symbol

Parameter

VF

Forward on-voltage

trr

Reverse recovery time

Qrr

Reverse recovery charge

Irrm

Reverse recovery current

trr

Reverse recovery time

Qrr

Reverse recovery charge

Irrm

Reverse recovery current

Test conditions

IF = 30 A

IF = 30 A, TC = 125 °C

IF = 30 A, VR = 50 V,

di/dt =100 A/µs

(see Figure 21)

IF = 30 A, VR = 50 V,

TC= 125 °C,

di/dt =100 A/µs

(see Figure 21)

Min Typ. Max Unit

2.4

V

1.8

V

45

ns

56

nC

2.55

A

100

ns

290

nC

5.8

A

6/15

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