HY3506W Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

HY3506W

N-Channel Enhancement Mode MOSFET

Unspecified 

HY3506P/W

N-Channel Enhancement Mode MOSFET

Features

Pin Description

• 60V/190A

RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V

• 100% avalanche tested

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

G

D

S

TO-220

G

D

S

D

TO-247

Applications

• Switching application

• Power Management for Inverter Systems.

Ordering and Marking Information

G

S

N-Channel MOSFET

P

HY3506

YYÿ XXXJWW G

W

HY3506

YYÿ XXXJWW G

Package Code

P : TO220-3L

W : TO247-3L

Date Code

YYXXX WW

Assembly Material

G : Lead Free Device

Note:

HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate

termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free

requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI

defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in

homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

1

www.hooyi-semi.com

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