2SD1590 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1590 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1590
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
1.5
V
2.0
V
1.0
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 3A; VCE= 2V
2000
15000
www.iscsemi.cn hFE -2
DC Current Gain
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 5A; VCE= 2V
500
1.0
IC= 3A, IB1= -IB2= 3mA;
RL= 16.7Ω; VCC≈ 50V
3.5
tf
Fall Time
1.2
μs
μs
μs
hFE-1 Classifications
M
L
K
2000-5000 3000-7000 5000-15000
isc Website：www.iscsemi.cn
2
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