2N4339 Просмотр технического описания (PDF) - InterFET

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производитель

2N4339

N-Channel Silicon Junction Field-Effect Transistor

InterFET  

B-58

01/99

J230, J231

N-Channel Silicon Junction Field-Effect Transistor

¥ Audio Amplifiers

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

– 40 V

50 mA

360 mW

3.27 mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

Gate Operating Current

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

V(BR)GSS

IGSS

IG

VGS(OFF)

IDSS

Dynamic Electrical Characteristics

Common Source Forward

Transconductance

g fs

Common Source Output Conductance gos

Common Source Input Capacitance Ciss

Common Source Reverse

Transfer Capacitance

Crss

Equivalent Short Circuit Input

Noise Voltage

e¯N

J230

J231

Min Typ Max Min Typ Max Unit

– 40

– 40

V

– 250

– 250 pA

–2

–2

pA

– 0.5

– 3 – 1.5

–5 V

0.7

32

6 mA

Process NJ16

Test Conditions

IG = – 1µA, VDS = ØV

VGS = – 30V, VDS = ØV

VDS = 20V, ID = ØV

VDS = 20V, ID = 1 µA

VDS = 20V, VGS = ØV

1000

3500 1500

4000 µS

1.5

3

µS

4

4

pF

VDS = 20V, VGS = ØV

VDS = 20V, VGS = ØV

VDS = 20V, VGS = ØV

1

8 30

2

1

pF

VDS = 20V, VGS = ØV

8 30 nV/√Hz VDS = 10V, VGS = ØV

2

nV/√Hz VDS = 10V, VGS = ØV

f = 1 kHz

f = 1 kHz

f = 1 MHz

f = 1 MHz

f = 10 Hz

f = 1 kHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ230, SMPJ231

www.interfet.com

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