BTA10G-6-B-TF3-T Просмотр технического описания (PDF) - Unisonic Technologies

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BTA10G-6-B-TF3-T

10A TRIACS

Unisonic Technologies 

BTA10

Preliminary

TRIACS

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

RMS On-State Current (Full Sine Wave) TC=95°C

SYMBOL

IT(RMS)

RATINGS

10

UNIT

A

Non Repetitive Surge Peak On-State

Current (Full Cycle TJ initial=25°C)

F=50Hz t=20ms

F=60Hz t=16.7ms

ITSM

100

105

A

A

I2t Value for Fusing

tP=10ms

I2t

55

A2s

Critical Rate of Rise of On-State Current:

IG=2xIGT, tr≤100ns

F=120Hz

TJ=125°C

dI/dt

Non Repetitive Surge Peak Off-State

Voltage

tP=10ms TJ=25°C VDSM/VRSM

50

VDSM/VRSM+100

A/µs

V

Peak Gate Current

tP=20µs TJ=125°C

IGM

4

A

Average Gate Power Dissipation

TJ=125°C PG(AV)

1

W

Operating Junction Temperature

Storage Junction Temperature

TJ

-40~+125

°C

TSTG

-40~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL RESISTANCES

PARAMETER

Junction to Ambient

Junction to Case (AC)

SYMBOL

θJA

θJC

RATINGS

60

2.4

 ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified)

UNIT

°C/W

°C/W

FOR STANDARD (4 QUADRANTS)

PARAMETER

SYMBOL

TEST CONDITIONS

C

MIN TYP

MAX

MIN

B

TYP

MAX

UNIT

Gate Trigger Current

(Note 1)

Gate Trigger Voltage

IGT

VD=12V,

VGT

RL=33Ω

I-II-III

IV

ALL

25

50 mA

50

100 mA

1.3

1.3 V

Gate Non-Trigger Voltage

Holding Current (Note 2)

VD=VDRM,

VGD

RL=3.3kΩ, ALL

TJ=125°C

IH

IT=500mA

0.2

0.2

V

25

50 mA

Latching Current

IL

IG=1.2IGT

I-III-IV

II

40

50 mA

80

100 mA

Critical Rate of Rise of

Off-State Voltage (Note 2)

dV/dt

VD=67%VDRM, Gate Open,

TJ=125°C

200

400

V/µs

Critical Rate of Rise of

Off-State Voltage at

Commutation (Note 2)

(dV/dt)c (dI/dt)c=4.4A/ms, TJ= 125°C 5

10

V/µs

 STATIC CHARACTERISTICS

PARAMETER

SYMBOL

Peak On-State Voltage (Note 2)

VT

Threshold Voltage (Note 2)

VTO

Dynamic Resistance (Note 2)

RD

Repetitive Peak Off-State Current

IDRM

IRRM

Note: 1. Minimum IGT is guaranteed at 5% of IGT max.

2. For both polarities of MT2 referenced to MT1.

TEST CONDITIONS

MIN TYP MAX UNIT

ITM=14A, tP=380μs

VDRM=VRRM

TJ=25°C

TJ=125°C

TJ=125°C

TJ=25°C

TJ=125°C

1.55 V

0.85 V

40 mΩ

5 μA

1 mA

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R401-031.d

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