IRF9520 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRF9520 Datasheet PDF : 7 Pages
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IRF9520
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9520
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain
TC =100oC . . .
Current
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ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-6
-4
-24
±20
40
0.32
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
370
-55 to 150
mJ
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
SYMBOL
TEST CONDITIONS
BV DSS
VGS(TH)
IDSS
ID(ON)
IGSS
r DS(ON)
gfs
ID = -250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
VGS = ±20V
ID = -3.5A, VGS = -10V (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = -3.5A
( Figure 12)
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Q gd
CISS
COSS
C RSS
LD
LS
VDD = 0.5 x Rated BVDSS, ID ≈ -6.0A,
RG = 50Ω , RL = 7.7Ω€ for VDSS = 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw on Tab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
S
RθJC
R θ JA
Typical Socket Mount
MIN
-100
-2
-
-
TYP
-
-
-
-
MAX
-
-4
-25
-250
UNITS
V
V
µA
µA
-6
-
-
A
-
-
±100 nA
- 0.500 0.600 Ω
0.9
2
-
S
-
25
50
ns
-
50
100
ns
-
50
100
ns
-
50
100
ns
-
16
22
nC
-
9
-
nC
-
7
-
nC
-
300
-
pF
-
200
-
pF
-
50
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
3.12 oC/W
-
-
62.5 oC/W
©2002 Fairchild Semiconductor Corporation
IRF9520 Rev. B
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