INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD819
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
ICP= 3A; IB1(end)= 0.8A
MIN TYP. MAX UNIT
8.0
V
1.5
V
10 μA
1.0 mA
8
95
pF
3
MHz
1.0 μs
isc Website:www.iscsemi.cn