2SD819 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SD819

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD819

DESCRIPTION

·High Collector-Base Breakdown Voltage-

: V(BR)CBO= 1500V (Min.)

·Low Collector Saturation Voltage-

·High Switching Speed

APPLICATIONS

·Designed for color TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

600

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3.5

A

IE

Emitter Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-3.5

A

50

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

Share Link: