BUP313D Просмотр технического описания (PDF) - Siemens AG
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BUP313D Datasheet PDF : 8 Pages
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BUP 313D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
220
W
180
Ptot
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
tp = 9.0µs
10 µs
A
IC
10 1
100 µs
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
32
A
IC
24
20
16
12
8
4
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
ZthJC
10 -1
10 0
10 -1
10 0
10 1
Semiconductor Group
1 ms
10 ms
DC
10 2
10 3
V
VCE
4
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Dec-02-1996
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